Charge injection at carbon nanotube-SiO2 interface

• Main Authors: Ong, Hock Guan, Cheah, Jun Wei, Chen, Lang, TangTang, Hosea, Xu, Yanping, Li, Bing, Zhang, Hua, Li, Lain-Jong, Wang, Junling
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Nanostructured materials
• Online Access: https://hdl.handle.net/10356/99208; http://hdl.handle.net/10220/6859
• Institution: Nanyang Technological University

Most single-wall carbon nanotube field-effect transistors show significant hysteresis in their transfer characteristics between forward and reverse gate bias sweeps. It was proposed that the hysteresis is due to a dynamic charging process at the carbon nanotube-dielectric interface. We have studied...