Effect of surface contamination on electron tunneling in the high bias range

The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between t...

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Main Authors: Qin, Hailang, Goh, Johnson Kuan Eng, Bosman, Michel, Li, Xiang, Pey, Kin Leong, Troadec, Cedric
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99330
http://hdl.handle.net/10220/17163
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-993302020-03-07T14:02:39Z Effect of surface contamination on electron tunneling in the high bias range Qin, Hailang Goh, Johnson Kuan Eng Bosman, Michel Li, Xiang Pey, Kin Leong Troadec, Cedric School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between the experiments performed with in situ and ex situ deposited Au. Detailed studies show that the difference arises from the contaminations during air exposure. These contaminations significantly accelerated the material transfer between the tip and the sample during tunneling and lead to the unreliability of BEEM studies in the high bias range on the ex situ prepared sample. Published Version 2013-10-31T08:05:29Z 2019-12-06T20:06:05Z 2013-10-31T08:05:29Z 2019-12-06T20:06:05Z 2012 2012 Journal Article Qin, H., Goh, J. K. E., Bosman, M., Li, X., Pey, K. L., & Troadec, C. (2012). Effect of surface contamination on electron tunneling in the high bias range. Journal of vacuum science & technology A, 30(4), 041402-. 0734-2101 https://hdl.handle.net/10356/99330 http://hdl.handle.net/10220/17163 10.1116/1.4721640 en Journal of vacuum science & technology A © 2012 American Vacuum Society. This paper was published in Journal of vacuum science & technology Aand is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official OpenURL: [http://dx.doi.org/10.1116/1.4721640]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Qin, Hailang
Goh, Johnson Kuan Eng
Bosman, Michel
Li, Xiang
Pey, Kin Leong
Troadec, Cedric
Effect of surface contamination on electron tunneling in the high bias range
description The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between the experiments performed with in situ and ex situ deposited Au. Detailed studies show that the difference arises from the contaminations during air exposure. These contaminations significantly accelerated the material transfer between the tip and the sample during tunneling and lead to the unreliability of BEEM studies in the high bias range on the ex situ prepared sample.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Qin, Hailang
Goh, Johnson Kuan Eng
Bosman, Michel
Li, Xiang
Pey, Kin Leong
Troadec, Cedric
format Article
author Qin, Hailang
Goh, Johnson Kuan Eng
Bosman, Michel
Li, Xiang
Pey, Kin Leong
Troadec, Cedric
author_sort Qin, Hailang
title Effect of surface contamination on electron tunneling in the high bias range
title_short Effect of surface contamination on electron tunneling in the high bias range
title_full Effect of surface contamination on electron tunneling in the high bias range
title_fullStr Effect of surface contamination on electron tunneling in the high bias range
title_full_unstemmed Effect of surface contamination on electron tunneling in the high bias range
title_sort effect of surface contamination on electron tunneling in the high bias range
publishDate 2013
url https://hdl.handle.net/10356/99330
http://hdl.handle.net/10220/17163
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