Effect of surface contamination on electron tunneling in the high bias range

• Main Authors: Qin, Hailang, Goh, Johnson Kuan Eng, Bosman, Michel, Li, Xiang, Pey, Kin Leong, Troadec, Cedric
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99330; http://hdl.handle.net/10220/17163
• Institution: Nanyang Technological University

The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between t...