Effect of surface contamination on electron tunneling in the high bias range

• المؤلفون الرئيسيون: Qin, Hailang, Goh, Johnson Kuan Eng, Bosman, Michel, Li, Xiang, Pey, Kin Leong, Troadec, Cedric
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99330; http://hdl.handle.net/10220/17163
• المؤسسة: Nanyang Technological University

The effect of surface contamination on the electron tunneling in the high bias range is investigated from the perspective of ballistic electron emission microscopy (BEEM). A comparative BEEM study on the Au/SiO2/Si devices shows that there is a significant difference in the high bias range between t...