A ZnO driven silicon cantilever for nanoscale actuation

A ZnO driven silicon cantilever for nanoscale actuation

A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were inv...

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Main Authors: Yuan, Yanhui, Du, Hejun, Wang, Peihong
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99379
http://hdl.handle.net/10220/10723
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-993792020-03-07T13:22:14Z A ZnO driven silicon cantilever for nanoscale actuation Yuan, Yanhui Du, Hejun Wang, Peihong School of Mechanical and Aerospace Engineering A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level. 2013-06-26T07:18:24Z 2019-12-06T20:06:36Z 2013-06-26T07:18:24Z 2019-12-06T20:06:36Z 2012 2012 Journal Article Yuan, Y., Du, H., & Wang, P. (2012). A ZnO Driven Silicon Cantilever for Nanoscale Actuation. Advanced Materials Research, 486, 23-26. 1662-8985 https://hdl.handle.net/10356/99379 http://hdl.handle.net/10220/10723 10.4028/www.scientific.net/AMR.486.23 en Advanced materials research © 2012 Trans Tech Publications, Switzerland.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Yuan, Yanhui
Du, Hejun
Wang, Peihong
format Article
author Yuan, Yanhui
Du, Hejun
Wang, Peihong
spellingShingle Yuan, Yanhui
Du, Hejun
Wang, Peihong
A ZnO driven silicon cantilever for nanoscale actuation
author_sort Yuan, Yanhui
title A ZnO driven silicon cantilever for nanoscale actuation
title_short A ZnO driven silicon cantilever for nanoscale actuation
title_full A ZnO driven silicon cantilever for nanoscale actuation
title_fullStr A ZnO driven silicon cantilever for nanoscale actuation
title_full_unstemmed A ZnO driven silicon cantilever for nanoscale actuation
title_sort zno driven silicon cantilever for nanoscale actuation
publishDate 2013
url https://hdl.handle.net/10356/99379
http://hdl.handle.net/10220/10723
_version_ 1681048916255047680

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