A ZnO driven silicon cantilever for nanoscale actuation
A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were inv...
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2013
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sg-ntu-dr.10356-993792020-03-07T13:22:14Z A ZnO driven silicon cantilever for nanoscale actuation Yuan, Yanhui Du, Hejun Wang, Peihong School of Mechanical and Aerospace Engineering A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level. 2013-06-26T07:18:24Z 2019-12-06T20:06:36Z 2013-06-26T07:18:24Z 2019-12-06T20:06:36Z 2012 2012 Journal Article Yuan, Y., Du, H., & Wang, P. (2012). A ZnO Driven Silicon Cantilever for Nanoscale Actuation. Advanced Materials Research, 486, 23-26. 1662-8985 https://hdl.handle.net/10356/99379 http://hdl.handle.net/10220/10723 10.4028/www.scientific.net/AMR.486.23 en Advanced materials research © 2012 Trans Tech Publications, Switzerland. |
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A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level. |
| author2 |
School of Mechanical and Aerospace Engineering |
| author_facet |
School of Mechanical and Aerospace Engineering Yuan, Yanhui Du, Hejun Wang, Peihong |
| format |
Article |
| author |
Yuan, Yanhui Du, Hejun Wang, Peihong |
| spellingShingle |
Yuan, Yanhui Du, Hejun Wang, Peihong A ZnO driven silicon cantilever for nanoscale actuation |
| author_sort |
Yuan, Yanhui |
| title |
A ZnO driven silicon cantilever for nanoscale actuation |
| title_short |
A ZnO driven silicon cantilever for nanoscale actuation |
| title_full |
A ZnO driven silicon cantilever for nanoscale actuation |
| title_fullStr |
A ZnO driven silicon cantilever for nanoscale actuation |
| title_full_unstemmed |
A ZnO driven silicon cantilever for nanoscale actuation |
| title_sort |
zno driven silicon cantilever for nanoscale actuation |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/99379 http://hdl.handle.net/10220/10723 |
| _version_ |
1681048916255047680 |