Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy
Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube−dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotub...
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sg-ntu-dr.10356-998312020-06-01T10:26:32Z Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy He, Yingran Ong, Hock Guan Zhao, Yang He, Sailing Li, Lain-Jong Wang, Junling School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube−dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO2 at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO2 surface under ambient conditions at different temperatures, and a critical temperature of 150 °C is observed. The activation energy of charge diffusion changes from 0.43 to 0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. 2011-12-16T07:40:12Z 2019-12-06T20:12:07Z 2011-12-16T07:40:12Z 2019-12-06T20:12:07Z 2009 2009 Journal Article He, Y., Ong, H. G., Zhao, Y., He, S., Li, L. J., & Wang, J. (2009). Study of Charge Diffusion at the Carbon Nanotube-SiO2 Interface by Electrostatic Force Microscopy. Journal of Physical Chemistry C, 113(35), 15476-15479. https://hdl.handle.net/10356/99831 http://hdl.handle.net/10220/7418 10.1021/jp905779f en Journal of physical chemistry C © 2009 American Chemical Society |
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DRNTU::Engineering::Materials::Nanostructured materials He, Yingran Ong, Hock Guan Zhao, Yang He, Sailing Li, Lain-Jong Wang, Junling Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
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Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube−dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotubes and SiO2 at different temperatures using an electrostatic force microscope. Numerical simulations were performed to extract the charge diffusion coefficients on the SiO2 surface under ambient conditions at different temperatures, and a critical temperature of 150 °C is observed. The activation energy of charge diffusion changes from 0.43 to 0.98 eV above this temperature, which is attributed to the change of surface chemistry. A more accurate model taking into consideration the electrostatic interaction among charges is used subsequently, and the fitting results are significantly improved. It is noted that the two models lead to similar activation energies. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering He, Yingran Ong, Hock Guan Zhao, Yang He, Sailing Li, Lain-Jong Wang, Junling |
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Article |
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He, Yingran Ong, Hock Guan Zhao, Yang He, Sailing Li, Lain-Jong Wang, Junling |
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He, Yingran |
title |
Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
title_short |
Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
title_full |
Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
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Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
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Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy |
title_sort |
study of charge diffusion at the carbon nanotube-sio2 interface by electrostatic force microscopy |
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2011 |
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https://hdl.handle.net/10356/99831 http://hdl.handle.net/10220/7418 |
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