Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy

• Main Authors: He, Yingran, Ong, Hock Guan, Zhao, Yang, He, Sailing, Li, Lain-Jong, Wang, Junling
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Nanostructured materials
• Online Access: https://hdl.handle.net/10356/99831; http://hdl.handle.net/10220/7418
• Institution: Nanyang Technological University

Hysteresis behavior is observed in the transfer characteristic of most carbon-nanotube-based field effect transistors, and charges trapped at the carbon nanotube−dielectric interface are believed to be the cause. We have studied charge injection and dissipation around the interface of carbon nanotub...