A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement

A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement

A 5.61 pJ, 16 kb 9T SRAM is implemented in 65nm CMOS technology. A single-ended equalized bitline scheme is proposed to improve both read bitline voltage swing and sensing timing window. A fast local write-back allows the half-select-free write operation without performance degradation. The test chi...

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Main Authors: Li, Qi, Wang, Bo, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/99838
http://hdl.handle.net/10220/16227
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-998382020-03-07T13:24:49Z A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement Li, Qi Wang, Bo Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering European Solid State Device Research Conference (2012 : 42th) DRNTU::Engineering::Electrical and electronic engineering A 5.61 pJ, 16 kb 9T SRAM is implemented in 65nm CMOS technology. A single-ended equalized bitline scheme is proposed to improve both read bitline voltage swing and sensing timing window. A fast local write-back allows the half-select-free write operation without performance degradation. The test chip shows a minimum operating voltage of 0.24V and a minimum energy of 5.61pJ at 0.3V. 2013-10-03T03:00:31Z 2019-12-06T20:12:12Z 2013-10-03T03:00:31Z 2019-12-06T20:12:12Z 2012 2012 Conference Paper Li, Q., Wang, B., & Kim, T. T. (2012). A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement. ESSDERC 2012 - 42nd European Solid State Device Research Conference, pp.201-204. https://hdl.handle.net/10356/99838 http://hdl.handle.net/10220/16227 10.1109/ESSDERC.2012.6343368 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Li, Qi
Wang, Bo
Kim, Tony Tae-Hyoung
A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
description A 5.61 pJ, 16 kb 9T SRAM is implemented in 65nm CMOS technology. A single-ended equalized bitline scheme is proposed to improve both read bitline voltage swing and sensing timing window. A fast local write-back allows the half-select-free write operation without performance degradation. The test chip shows a minimum operating voltage of 0.24V and a minimum energy of 5.61pJ at 0.3V.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Li, Qi
Wang, Bo
Kim, Tony Tae-Hyoung
format Conference or Workshop Item
author Li, Qi
Wang, Bo
Kim, Tony Tae-Hyoung
author_sort Li, Qi
title A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
title_short A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
title_full A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
title_fullStr A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
title_full_unstemmed A 5.61 pJ, 16 kb 9T SRAM with single-ended equalized bitlines and fast local write-back for cell stability improvement
title_sort 5.61 pj, 16 kb 9t sram with single-ended equalized bitlines and fast local write-back for cell stability improvement
publishDate 2013
url https://hdl.handle.net/10356/99838
http://hdl.handle.net/10220/16227
_version_ 1681044499108724736

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