A general lithography-free method of micro/nanoscale fabrication and patterning on Si and Ge surfaces
Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orienta...
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Main Authors: | , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Online Access: | https://hdl.handle.net/10356/99875 http://hdl.handle.net/10220/9189 |
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Institution: | Nanyang Technological University |
Language: | English |