Going green for discrete power diode manufacturers
Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufactur...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/99901 http://hdl.handle.net/10220/6360 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 degrees celcius and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics. |
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