Going green for discrete power diode manufacturers

• Main Authors: Tan, Cher Ming, Sun, Lina, Wang, Chase
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• Online Access: https://hdl.handle.net/10356/99901; http://hdl.handle.net/10220/6360
• Institution: Nanyang Technological University

Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufactur...