Going green for discrete power diode manufacturers

Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufactur...

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Main Authors:	Tan, Cher Ming, Sun, Lina, Wang, Chase
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2010
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Online Access:	https://hdl.handle.net/10356/99901 http://hdl.handle.net/10220/6360
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-999012020-03-07T13:24:49Z Going green for discrete power diode manufacturers Tan, Cher Ming Sun, Lina Wang, Chase School of Electrical and Electronic Engineering IEEE Conference on Industrial Electronics and Applications (4th : 2009 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering::Power electronics Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 degrees celcius and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics. Published version 2010-08-30T03:53:55Z 2019-12-06T20:13:16Z 2010-08-30T03:53:55Z 2019-12-06T20:13:16Z 2009 2009 Conference Paper Tan, C. M., Sun, L., & Wang, C. (2009). Going green for discrete power diode manufacturers. In proceedings of the 4th IEEE Conference on Industrial Electronics and Applications: Xian, China, (pp.3303-3306). https://hdl.handle.net/10356/99901 http://hdl.handle.net/10220/6360 10.1109/ICIEA.2009.5138814 en © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Power electronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Power electronics Tan, Cher Ming Sun, Lina Wang, Chase Going green for discrete power diode manufacturers
description	Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 degrees celcius and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Tan, Cher Ming Sun, Lina Wang, Chase
format	Conference or Workshop Item
author	Tan, Cher Ming Sun, Lina Wang, Chase
author_sort	Tan, Cher Ming
title	Going green for discrete power diode manufacturers
title_short	Going green for discrete power diode manufacturers
title_full	Going green for discrete power diode manufacturers
title_fullStr	Going green for discrete power diode manufacturers
title_full_unstemmed	Going green for discrete power diode manufacturers
title_sort	going green for discrete power diode manufacturers
publishDate	2010
url	https://hdl.handle.net/10356/99901 http://hdl.handle.net/10220/6360
_version_	1681044208376348672

Going green for discrete power diode manufacturers

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