Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation

• Main Authors: Wang, Youyi, Zhang, Dao Hua, Zhang, Sam, Wee, A. T. S., Ramam, A., Chen, X. Z., Jin, Y. J., Li, J. H., Liu, C. J.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Chemistry::Analytical chemistry::Gas analysis
• Online Access: https://hdl.handle.net/10356/99910; http://hdl.handle.net/10220/9340
• Institution: Nanyang Technological University

We report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy...