Development of InSbN alloys for 8 to 12 micron room temperature infrared photodetectors

• Main Author: Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Language: English
• Published: 2008
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/14521
• Institution: Nanyang Technological University

Indium antimonide (InSb) has the smallest energy gap in the binary III-V materials, with a cut off wavelength of 7 μm at 300 K. The introduction of nitrogen into InSb causes a phenomenon of a strong negative band gap bowing effect, leading to the extended response wavelength of 8 μm to 12 μm rang...