Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation
We report bonding and diffusion behavior of nitrogen incorporated into InSb wafer by two-step implantation. Three nitrogen-containing regions, i.e., a surface accumulation region, a uniform region, and a tail region, were observed in the samples after post annealing. X-ray photoelectron spectroscopy...
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Main Authors: | Wang, Youyi, Zhang, Dao Hua, Zhang, Sam, Wee, A. T. S., Ramam, A., Chen, X. Z., Jin, Y. J., Li, J. H., Liu, C. J. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99910 http://hdl.handle.net/10220/9340 |
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Institution: | Nanyang Technological University |
Language: | English |
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