Effect of N incorporation on the characteristics of InSbN P–N diodes
We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On...
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Main Authors: | , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96475 http://hdl.handle.net/10220/10288 |
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Institution: | Nanyang Technological University |
Language: | English |