Effect of N incorporation on the characteristics of InSbN P–N diodes
We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On...
محفوظ في:
| المؤلفون الرئيسيون: | , , , |
|---|---|
| مؤلفون آخرون: | |
| التنسيق: | مقال |
| اللغة: | English |
| منشور في: |
2013
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/96475 http://hdl.handle.net/10220/10288 |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
| id |
sg-ntu-dr.10356-96475 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-964752020-03-07T14:02:46Z Effect of N incorporation on the characteristics of InSbN P–N diodes Pham, H. T. Lim, Kim Peow Yoon, Soon Fatt Tan, Kian Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors. 2013-06-13T01:52:59Z 2019-12-06T19:31:14Z 2013-06-13T01:52:59Z 2019-12-06T19:31:14Z 2011 2011 Journal Article Lim, K. P., Pham, H. T., Yoon, S. F., & Tan, K. H. (2012). Effect of N incorporation on the characteristics of InSbN P–N diodes. Thin Solid Films, 520(6), 2269-2271. 0040-6090 https://hdl.handle.net/10356/96475 http://hdl.handle.net/10220/10288 10.1016/j.tsf.2011.09.047 en Thin solid films © 2011 Elsevier B.V. |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| country |
Singapore |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering Pham, H. T. Lim, Kim Peow Yoon, Soon Fatt Tan, Kian Hua Effect of N incorporation on the characteristics of InSbN P–N diodes |
| description |
We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On the other hand, high reverse dark current and series resistances are observed in the electrical characteristics of the InSbN diode which are contributed with the presence of planar growth defects. These results will be useful to those working on midinfrared photodetectors. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Pham, H. T. Lim, Kim Peow Yoon, Soon Fatt Tan, Kian Hua |
| format |
Article |
| author |
Pham, H. T. Lim, Kim Peow Yoon, Soon Fatt Tan, Kian Hua |
| author_sort |
Pham, H. T. |
| title |
Effect of N incorporation on the characteristics of InSbN P–N diodes |
| title_short |
Effect of N incorporation on the characteristics of InSbN P–N diodes |
| title_full |
Effect of N incorporation on the characteristics of InSbN P–N diodes |
| title_fullStr |
Effect of N incorporation on the characteristics of InSbN P–N diodes |
| title_full_unstemmed |
Effect of N incorporation on the characteristics of InSbN P–N diodes |
| title_sort |
effect of n incorporation on the characteristics of insbn p–n diodes |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/96475 http://hdl.handle.net/10220/10288 |
| _version_ |
1681049905345331200 |