Effect of N incorporation on the characteristics of InSbN P–N diodes

• المؤلفون الرئيسيون: Pham, H. T., Lim, Kim Peow, Yoon, Soon Fatt, Tan, Kian Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96475; http://hdl.handle.net/10220/10288
• المؤسسة: Nanyang Technological University

We report on the effect of N incorporation in the characteristics of the 2 μm thick InSbN photoabsorption layer of a p–n diode grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. As compared to N free InSb layer, the absorption wavelength extends to near 9 μm. On...