Dopant profile model in a shallow germanium n+/p junction

A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in sh...

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Bibliographic Details
Main Authors: Baek, Jung Woo, Shim, Jaewoo, Park, Jin-Hong, Jung, Woo-Shik, Yu, Hyun-Yong
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/99968
http://hdl.handle.net/10220/18462
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Institution: Nanyang Technological University
Language: English