Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETs

Correspondence: Effects of deliberate copper contamination from the plating solution on the electrical characteristics of MOSFETs

10.1109/66.920729

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書目詳細資料
Main Authors: Tee, K.C., Prasad, K., Lee, C.S., Gong, H., Cha, C.L., Chan, L., See, A.K.
其他作者: MATERIALS SCIENCE
格式: Article
出版: 2014
主題:
Contamination
Copper
MOSFET
Silicon
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/106993
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機構: National University of Singapore
實物特徵
總結:10.1109/66.920729

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