Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

10.1007/s003390100823

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Bibliographic Details
Main Authors:	Liu, J.-M., Yuan, G.L., Chen, X.Y., Liu, Z.G., Du, Y.W., Huang, Q., Li, J., Xu, S.Y., Ong, C.K.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/113103
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1131032023-10-26T21:27:36Z Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films Liu, J.-M. Yuan, G.L. Chen, X.Y. Liu, Z.G. Du, Y.W. Huang, Q. Li, J. Xu, S.Y. Ong, C.K. PHYSICS INSTITUTE OF ENGINEERING SCIENCE 10.1007/s003390100823 Applied Physics A: Materials Science and Processing 73 5 625-630 APAMF 2014-11-28T09:12:02Z 2014-11-28T09:12:02Z 2001-11 Article Liu, J.-M., Yuan, G.L., Chen, X.Y., Liu, Z.G., Du, Y.W., Huang, Q., Li, J., Xu, S.Y., Ong, C.K. (2001-11). Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films. Applied Physics A: Materials Science and Processing 73 (5) : 625-630. ScholarBank@NUS Repository. https://doi.org/10.1007/s003390100823 09478396 http://scholarbank.nus.edu.sg/handle/10635/113103 000171991200017 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1007/s003390100823
author2	PHYSICS
author_facet	PHYSICS Liu, J.-M. Yuan, G.L. Chen, X.Y. Liu, Z.G. Du, Y.W. Huang, Q. Li, J. Xu, S.Y. Ong, C.K.
format	Article
author	Liu, J.-M. Yuan, G.L. Chen, X.Y. Liu, Z.G. Du, Y.W. Huang, Q. Li, J. Xu, S.Y. Ong, C.K.
spellingShingle	Liu, J.-M. Yuan, G.L. Chen, X.Y. Liu, Z.G. Du, Y.W. Huang, Q. Li, J. Xu, S.Y. Ong, C.K. Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
author_sort	Liu, J.-M.
title	Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
title_short	Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
title_full	Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
title_fullStr	Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
title_full_unstemmed	Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films
title_sort	spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized la0.5sr0.5mno3 thin films
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/113103
_version_	1781789167608397824

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

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