Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

• Main Authors: Liu, J.-M., Yuan, G.L., Chen, X.Y., Liu, Z.G., Du, Y.W., Huang, Q., Li, J., Xu, S.Y., Ong, C.K.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/113103
• Institution: National University of Singapore

10.1007/s003390100823