Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

10.1007/s003390100823

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書目詳細資料
Main Authors:	Liu, J.-M., Yuan, G.L., Chen, X.Y., Liu, Z.G., Du, Y.W., Huang, Q., Li, J., Xu, S.Y., Ong, C.K.
其他作者:	INSTITUTE OF ENGINEERING SCIENCE
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/113103
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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