Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures

Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures

Applied Physics Letters

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Bibliographic Details
Main Authors: Goo, C.H., Lau, W.S., Chong, T.C., Tan, L.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114535
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Institution: National University of Singapore
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Summary:Applied Physics Letters

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