Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures
Applied Physics Letters
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sg-nus-scholar.10635-1145352015-01-27T15:24:55Z Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. ELECTRICAL ENGINEERING Applied Physics Letters 69 17 2543-2545 APPLA 2014-12-02T08:05:47Z 2014-12-02T08:05:47Z 1996-10-21 Article Goo, C.H.,Lau, W.S.,Chong, T.C.,Tan, L.S. (1996-10-21). Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures. Applied Physics Letters 69 (17) : 2543-2545. ScholarBank@NUS Repository. 00036951 http://scholarbank.nus.edu.sg/handle/10635/114535 NOT_IN_WOS Scopus |
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National University of Singapore |
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Singapore |
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| description |
Applied Physics Letters |
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ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. |
| format |
Article |
| author |
Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. |
| spellingShingle |
Goo, C.H. Lau, W.S. Chong, T.C. Tan, L.S. Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| author_sort |
Goo, C.H. |
| title |
Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| title_short |
Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| title_full |
Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| title_fullStr |
Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| title_full_unstemmed |
Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures |
| title_sort |
trap signatures of as precipitates and as-antisite-related defects in gaas epilayers grown by molecular beam epitaxy at low temperatures |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/114535 |
| _version_ |
1681094843402551296 |