Activation of beryllium-implanted GaN by two-step annealing

MRS Internet Journal of Nitride Semiconductor Research

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Bibliographic Details
Main Authors: Sun, Y., Tan, L.S., Chua, S.J., Prakash, S.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/114539
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Institution: National University of Singapore
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