Activation of beryllium-implanted GaN by two-step annealing

Activation of beryllium-implanted GaN by two-step annealing

MRS Internet Journal of Nitride Semiconductor Research

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Bibliographic Details
Main Authors:	Sun, Y., Tan, L.S., Chua, S.J., Prakash, S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/114539
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Institution:	National University of Singapore

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