Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

• Main Authors: Pan, J.S., Liu, R.S., Zhang, Z., Poon, S.W., Ong, W.J., Tok, E.S.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Cobalt; Cobalt silicide; Growth mode; Hydrogen termination; Metal-semiconductor interface; Silicon; Surface morphology; X-ray photoelectron spectroscopy
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/115030
• Institution: National University of Singapore

10.1016/j.susc.2006.01.029