Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics
10.1016/j.susc.2006.01.029
Saved in:
Main Authors: | Pan, J.S., Liu, R.S., Zhang, Z., Poon, S.W., Ong, W.J., Tok, E.S. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115030 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Probing the behaviour of ultra thin Co layers on clean and hydrogen terminated Si(0 0 1) and Si(1 1 1) surfaces
by: Pan, J.S., et al.
Published: (2014) -
Structure of Co deposited 6H-SiC(0 0 0 1)
by: Chen, W., et al.
Published: (2014) -
Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface
by: Zhang, Z., et al.
Published: (2014) -
UHV deposition of Co thin films on low index Si surfaces
by: LIU RUISHENG
Published: (2010) -
Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)
by: PAN, J.S.P, et al.
Published: (2014)