Leakage behaviors of ferroelectric (Bi 3.15Nd 0.85) Ti 3O 12 thin film derived from RF sputtering
10.1007/s00339-011-6531-9
Saved in:
Main Authors: | Gao, X.S., Wang, J. |
---|---|
Other Authors: | NUS NANOSCIENCE & NANOTECH INITIATIVE |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/115168 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Thickness dependences of ferroelectric and dielectric properties in (Bi3.15Nd0.85)Ti3O12 thin films
by: Gao, X.S., et al.
Published: (2014) -
Ferroelectric properties of (Bi3.15Nd0.85)Ti 3O12 with decreasing film thickness
by: Gao, X., et al.
Published: (2014) -
Polarization behaviors of (Bi 3.15 Nd 0.85) Ti 3 O 12 thin films deposited by radio-frequency magnetron sputtering
by: Gao, X.S., et al.
Published: (2014) -
Ferroelectric and fatigue behavior of Pb(Zr0.52 Ti 0.48)O3/(Bi3.15Nd0.85)Ti 3O12 bilayered thin films
by: Sim, C.H., et al.
Published: (2014) -
Leakage behavior and conduction mechanisms of Ba(Ti0.85Sn 0.15)O3/Bi1.5Zn1.0Nb 1.5O7 heterostructures
by: Wang, S.J., et al.
Published: (2014)