Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

10.1016/j.tsf.2005.07.076

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Bibliographic Details
Main Authors:	Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Dielectric cap Impurity-free vacancy-enhanced intermixing InGaP InP Molecular beam epitaxy Optical properties Quantum well Rapid thermal annealing SIMS
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/115388
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-115388
record_format	dspace
spelling	sg-nus-scholar.10635-1153882023-10-30T22:12:01Z Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing Zhao, J. Chen, J. Feng, Z.C. Chen, J.L. Liu, R. Xu, G. INSTITUTE OF ENGINEERING SCIENCE Dielectric cap Impurity-free vacancy-enhanced intermixing InGaP InP Molecular beam epitaxy Optical properties Quantum well Rapid thermal annealing SIMS 10.1016/j.tsf.2005.07.076 Thin Solid Films 498 1-2 179-182 THSFA 2014-12-12T07:14:59Z 2014-12-12T07:14:59Z 2006-03-01 Conference Paper Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G. (2006-03-01). Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing. Thin Solid Films 498 (1-2) : 179-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.07.076 00406090 http://scholarbank.nus.edu.sg/handle/10635/115388 000235270500035 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dielectric cap Impurity-free vacancy-enhanced intermixing InGaP InP Molecular beam epitaxy Optical properties Quantum well Rapid thermal annealing SIMS
spellingShingle	Dielectric cap Impurity-free vacancy-enhanced intermixing InGaP InP Molecular beam epitaxy Optical properties Quantum well Rapid thermal annealing SIMS Zhao, J. Chen, J. Feng, Z.C. Chen, J.L. Liu, R. Xu, G. Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
description	10.1016/j.tsf.2005.07.076
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Zhao, J. Chen, J. Feng, Z.C. Chen, J.L. Liu, R. Xu, G.
format	Conference or Workshop Item
author	Zhao, J. Chen, J. Feng, Z.C. Chen, J.L. Liu, R. Xu, G.
author_sort	Zhao, J.
title	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
title_short	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
title_full	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
title_fullStr	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
title_full_unstemmed	Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
title_sort	band gap blue shift of ingaas/inp multiple quantum wells by different dielectric film coating and annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/115388
_version_	1781789388220399616

Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

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