Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

• Main Authors: Zhao, J., Chen, J., Feng, Z.C., Chen, J.L., Liu, R., Xu, G.
• Other Authors: INSTITUTE OF ENGINEERING SCIENCE
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Dielectric cap; Impurity-free vacancy-enhanced intermixing; InGaP; InP; Molecular beam epitaxy; Optical properties; Quantum well; Rapid thermal annealing; SIMS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/115388
• Institution: National University of Singapore

10.1016/j.tsf.2005.07.076