GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

10.1109/LPT.2005.851923

Saved in:

Bibliographic Details
Main Authors:	Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Article
Published:	2014
Subjects:	InGaAsNSb semiconductors Molecular beam epitaxy (MBE) p-i-n photodiodes Responsivity
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/116360
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-116360
record_format	dspace
spelling	sg-nus-scholar.10635-1163602023-10-30T09:14:16Z GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S. INSTITUTE OF ENGINEERING SCIENCE PHYSICS InGaAsNSb semiconductors Molecular beam epitaxy (MBE) p-i-n photodiodes Responsivity 10.1109/LPT.2005.851923 IEEE Photonics Technology Letters 17 9 1932-1934 IPTLE 2014-12-12T07:48:55Z 2014-12-12T07:48:55Z 2005-09 Article Cheah, W.K., Fan, W.J., Yoon, S.F., Zhang, D.H., Ng, B.K., Loke, W.K., Liu, R., Wee, A.T.S. (2005-09). GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer. IEEE Photonics Technology Letters 17 (9) : 1932-1934. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2005.851923 10411135 http://scholarbank.nus.edu.sg/handle/10635/116360 000231453500057 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	InGaAsNSb semiconductors Molecular beam epitaxy (MBE) p-i-n photodiodes Responsivity
spellingShingle	InGaAsNSb semiconductors Molecular beam epitaxy (MBE) p-i-n photodiodes Responsivity Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S. GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
description	10.1109/LPT.2005.851923
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S.
format	Article
author	Cheah, W.K. Fan, W.J. Yoon, S.F. Zhang, D.H. Ng, B.K. Loke, W.K. Liu, R. Wee, A.T.S.
author_sort	Cheah, W.K.
title	GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
title_short	GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
title_full	GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
title_fullStr	GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
title_full_unstemmed	GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
title_sort	gaas-based heterojunction p-i-n photodetectors using pentanary ingaasnsb as the intrinsic layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/116360
_version_	1781789506750382080

GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

Similar Items