MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES

Ph.D

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Bibliographic Details
Main Author:	ZHANG LI
Other Authors:	DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG)
Format:	Theses and Dissertations
Language:	English
Published:	2016
Subjects:	III-nitride semiconductor MOCVD growth characterization
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/122482
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-122482
record_format	dspace
spelling	sg-nus-scholar.10635-1224822020-02-02T13:09:08Z MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES ZHANG LI DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) Chua Soo Jin Chua Soo Jin III-nitride semiconductor MOCVD growth characterization Ph.D DOCTOR OF PHILOSOPHY (NGS) 2016-02-11T18:00:08Z 2016-02-11T18:00:08Z 2015-08-21 Thesis ZHANG LI (2015-08-21). MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/122482 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	III-nitride semiconductor MOCVD growth characterization
spellingShingle	III-nitride semiconductor MOCVD growth characterization ZHANG LI MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
description	Ph.D
author2	DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG)
author_facet	DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) ZHANG LI
format	Theses and Dissertations
author	ZHANG LI
author_sort	ZHANG LI
title	MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
title_short	MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
title_full	MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
title_fullStr	MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
title_full_unstemmed	MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES
title_sort	mocvd growth of gan on 200mm si and addressing foundry compatibility issues
publishDate	2016
url	http://scholarbank.nus.edu.sg/handle/10635/122482
_version_	1681095812743954432

MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES

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