MOCVD GROWTH OF GAN ON 200MM SI AND ADDRESSING FOUNDRY COMPATIBILITY ISSUES

Ph.D

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Bibliographic Details
Main Author: ZHANG LI
Other Authors: DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG)
Format: Theses and Dissertations
Language:English
Published: 2016
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/122482
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Institution: National University of Singapore
Language: English