Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine

Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine

Master's

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Bibliographic Details
Main Author: LIM HUI FERN, MICHELE
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
DLTS, Extended Defect, threshold pulse width
Online Access:http://scholarbank.nus.edu.sg/handle/10635/14701
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-147012024-10-26T06:06:34Z Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine LIM HUI FERN, MICHELE ELECTRICAL & COMPUTER ENGINEERING CHUA SOO JIN DLTS, Extended Defect, threshold pulse width Master's MASTER OF ENGINEERING 2010-04-08T10:45:51Z 2010-04-08T10:45:51Z 2005-05-13 Thesis LIM HUI FERN, MICHELE (2005-05-13). Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/14701 NOT_IN_WOS en
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic DLTS, Extended Defect, threshold pulse width
spellingShingle DLTS, Extended Defect, threshold pulse width
LIM HUI FERN, MICHELE
Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
description Master's
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
LIM HUI FERN, MICHELE
format Theses and Dissertations
author LIM HUI FERN, MICHELE
author_sort LIM HUI FERN, MICHELE
title Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
title_short Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
title_full Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
title_fullStr Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
title_full_unstemmed Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
title_sort analysis of extended defects in ingaaip grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine
publishDate 2010
url http://scholarbank.nus.edu.sg/handle/10635/14701
_version_ 1821212249654558720

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