Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

10.1038/s41467-018-04988-x

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Bibliographic Details
Main Authors: Miyauchi Y., Konabe S., Wang F., Zhang W., Hwang A., Hasegawa Y., Zhou L., Mouri S., Toh M., Eda G., Matsuda K.
Other Authors: DEPT OF PHYSICS
Format: Article
Published: Nature Publishing Group 2019
Online Access:http://scholarbank.nus.edu.sg/handle/10635/152525
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/152525

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