Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
10.1038/s41467-018-04988-x
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| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Nature Publishing Group
2019
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/152525 |
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| Institution: | National University of Singapore |