Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

10.1038/s41467-018-04988-x

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Bibliographic Details
Main Authors: Miyauchi Y., Konabe S., Wang F., Zhang W., Hwang A., Hasegawa Y., Zhou L., Mouri S., Toh M., Eda G., Matsuda K.
Other Authors: DEPT OF PHYSICS
Format: Article
Published: Nature Publishing Group 2019
Online Access:http://scholarbank.nus.edu.sg/handle/10635/152525
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1525252023-11-01T07:55:52Z Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors Miyauchi Y. Konabe S. Wang F. Zhang W. Hwang A. Hasegawa Y. Zhou L. Mouri S. Toh M. Eda G. Matsuda K. DEPT OF PHYSICS 10.1038/s41467-018-04988-x Nature Communications 9 1 2598 2019-03-21T08:34:35Z 2019-03-21T08:34:35Z 2018 Article Miyauchi Y., Konabe S., Wang F., Zhang W., Hwang A., Hasegawa Y., Zhou L., Mouri S., Toh M., Eda G., Matsuda K. (2018). Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors. Nature Communications 9 (1) : 2598. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-04988-x 20411723 http://scholarbank.nus.edu.sg/handle/10635/152525 Nature Publishing Group Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1038/s41467-018-04988-x
author2 DEPT OF PHYSICS
author_facet DEPT OF PHYSICS
Miyauchi Y.
Konabe S.
Wang F.
Zhang W.
Hwang A.
Hasegawa Y.
Zhou L.
Mouri S.
Toh M.
Eda G.
Matsuda K.
format Article
author Miyauchi Y.
Konabe S.
Wang F.
Zhang W.
Hwang A.
Hasegawa Y.
Zhou L.
Mouri S.
Toh M.
Eda G.
Matsuda K.
spellingShingle Miyauchi Y.
Konabe S.
Wang F.
Zhang W.
Hwang A.
Hasegawa Y.
Zhou L.
Mouri S.
Toh M.
Eda G.
Matsuda K.
Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
author_sort Miyauchi Y.
title Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_short Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_full Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_fullStr Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_full_unstemmed Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
title_sort evidence for line width and carrier screening effects on excitonic valley relaxation in 2d semiconductors
publisher Nature Publishing Group
publishDate 2019
url http://scholarbank.nus.edu.sg/handle/10635/152525
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