CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS

Master's

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Bibliographic Details
Main Author:	YONG FOO NUN
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	POCl3 doping Resistivity uniformity Doping process bias JMP 6.0 Statistical Process Control Design of Experiment Plackett-Burman design Response surface methodology n-diffusion sheet resistance (RS_NP) Pull-down polysilicon sheet resistance (RS_PL)
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/153912
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-153912
record_format	dspace
spelling	sg-nus-scholar.10635-1539122019-05-29T07:18:40Z CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS YONG FOO NUN SINGAPORE-MIT ALLIANCE Choi Wee Kiong Sun Jiansan POCl3 doping Resistivity uniformity Doping process bias JMP 6.0 Statistical Process Control Design of Experiment Plackett-Burman design Response surface methodology n-diffusion sheet resistance (RS_NP) Pull-down polysilicon sheet resistance (RS_PL) Master's MASTER OF SCIENCE IN ADVANCED MATERIALS FOR MICRO- & NANO- SYSTEMS 2019-05-09T08:15:38Z 2019-05-09T08:15:38Z 2006 Thesis YONG FOO NUN (2006). CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/153912 SMA BATCHLOAD 20190422
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	POCl3 doping Resistivity uniformity Doping process bias JMP 6.0 Statistical Process Control Design of Experiment Plackett-Burman design Response surface methodology n-diffusion sheet resistance (RS_NP) Pull-down polysilicon sheet resistance (RS_PL)
spellingShingle	POCl3 doping Resistivity uniformity Doping process bias JMP 6.0 Statistical Process Control Design of Experiment Plackett-Burman design Response surface methodology n-diffusion sheet resistance (RS_NP) Pull-down polysilicon sheet resistance (RS_PL) YONG FOO NUN CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
description	Master's
author2	SINGAPORE-MIT ALLIANCE
author_facet	SINGAPORE-MIT ALLIANCE YONG FOO NUN
format	Theses and Dissertations
author	YONG FOO NUN
author_sort	YONG FOO NUN
title	CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
title_short	CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
title_full	CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
title_fullStr	CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
title_full_unstemmed	CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS
title_sort	characterization study on the behavior of n-doped resistivity between single crystalline and poly-crystalline wafers
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/153912
_version_	1681099314527469568

CHARACTERIZATION STUDY ON THE BEHAVIOR OF N-DOPED RESISTIVITY BETWEEN SINGLE CRYSTALLINE AND POLY-CRYSTALLINE WAFERS

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