FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

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Bibliographic Details
Main Author:	LIU JINGWEI
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	GaN Gallium Nitride High Electron Mobility Transistor (HEMT) field effect transistor device fabrication process design material characterization Ohmic contact Schottky contact image reversal
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/154146
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-1541462019-05-15T13:15:22Z FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) LIU JINGWEI SINGAPORE-MIT ALLIANCE NG TIEN KHEE LIN SHI MING CHUA SOO JIN GaN Gallium Nitride High Electron Mobility Transistor (HEMT) field effect transistor device fabrication process design material characterization Ohmic contact Schottky contact image reversal Master's MASTER OF SCIENCE IN ADVANCED MATERIALS FOR MICRO- & NANO- SYSTEMS 2019-05-15T04:18:50Z 2019-05-15T04:18:50Z 2006 Thesis LIU JINGWEI (2006). FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT). ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/154146 SMA BATCHLOAD 20190422
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	GaN Gallium Nitride High Electron Mobility Transistor (HEMT) field effect transistor device fabrication process design material characterization Ohmic contact Schottky contact image reversal
spellingShingle	GaN Gallium Nitride High Electron Mobility Transistor (HEMT) field effect transistor device fabrication process design material characterization Ohmic contact Schottky contact image reversal LIU JINGWEI FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
description	Master's
author2	SINGAPORE-MIT ALLIANCE
author_facet	SINGAPORE-MIT ALLIANCE LIU JINGWEI
format	Theses and Dissertations
author	LIU JINGWEI
author_sort	LIU JINGWEI
title	FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
title_short	FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
title_full	FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
title_fullStr	FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
title_full_unstemmed	FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
title_sort	fabrication and characterization of gallium nitride high electron mobility transistor (hemt)
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/154146
_version_	1681099344773644288

FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

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