FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)

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Bibliographic Details
Main Author:	LIU JINGWEI
Other Authors:	SINGAPORE-MIT ALLIANCE
Format:	Theses and Dissertations
Published:	2019
Subjects:	GaN Gallium Nitride High Electron Mobility Transistor (HEMT) field effect transistor device fabrication process design material characterization Ohmic contact Schottky contact image reversal
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/154146
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Institution:	National University of Singapore

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