Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

10.1088/0022-3727/49/7/075104

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Bibliographic Details
Main Authors: Whitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: IOP Publishing 2019
Online Access:https://scholarbank.nus.edu.sg/handle/10635/155074
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/155074

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