Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

10.1088/0022-3727/49/7/075104

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Main Authors: Whitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: IOP Publishing 2019
Online Access:https://scholarbank.nus.edu.sg/handle/10635/155074
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spelling sg-nus-scholar.10635-1550742023-09-07T22:12:04Z Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices Whitcher, TJ Woon, KL Wong, WS Chanlek, N Nakajima, H Saisopa, T Songsiriritthigul, P CENTRE FOR ADVANCED 2D MATERIALS 10.1088/0022-3727/49/7/075104 Journal of Physics D: Applied Physics 49 7 075104-075104 2019-06-03T04:56:11Z 2019-06-03T04:56:11Z 2016-02-25 2019-06-03T01:59:15Z Article Whitcher, TJ, Woon, KL, Wong, WS, Chanlek, N, Nakajima, H, Saisopa, T, Songsiriritthigul, P (2016-02-25). Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices. Journal of Physics D: Applied Physics 49 (7) : 075104-075104. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/49/7/075104 00223727 13616463 https://scholarbank.nus.edu.sg/handle/10635/155074 Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ IOP Publishing Elements
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0022-3727/49/7/075104
author2 CENTRE FOR ADVANCED 2D MATERIALS
author_facet CENTRE FOR ADVANCED 2D MATERIALS
Whitcher, TJ
Woon, KL
Wong, WS
Chanlek, N
Nakajima, H
Saisopa, T
Songsiriritthigul, P
format Article
author Whitcher, TJ
Woon, KL
Wong, WS
Chanlek, N
Nakajima, H
Saisopa, T
Songsiriritthigul, P
spellingShingle Whitcher, TJ
Woon, KL
Wong, WS
Chanlek, N
Nakajima, H
Saisopa, T
Songsiriritthigul, P
Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
author_sort Whitcher, TJ
title Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
title_short Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
title_full Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
title_fullStr Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
title_full_unstemmed Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices
title_sort interfacial behavior of resistive switching in ito–pvk–al worm memory devices
publisher IOP Publishing
publishDate 2019
url https://scholarbank.nus.edu.sg/handle/10635/155074
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