Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator
10.1109/TCAD.2015.2427251
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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2019
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sg-nus-scholar.10635-1561842023-09-21T08:45:04Z Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik DEPT OF ELECTRICAL & COMPUTER ENGG Science & Technology Technology Computer Science, Hardware & Architecture Computer Science, Interdisciplinary Applications Engineering, Electrical & Electronic Computer Science Engineering Emerging nonvolatile memories (eNVMs) hardware security physical unclonable function (PUF) spin-transfer torque magnetic RAM (STT-MRAM) PHASE-CHANGE MEMORY DESIGN SIMULATION DEVICE PUFS 10.1109/TCAD.2015.2427251 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 34 7 1176-1187 2019-07-03T03:32:25Z 2019-07-03T03:32:25Z 2015-07-01 2019-07-03T03:10:31Z Article Zhang, Le, Fong, Xuanyao, Chang, Chip-Hong, Kong, Zhi Hui, Roy, Kaushik (2015-07-01). Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 34 (7) : 1176-1187. ScholarBank@NUS Repository. https://doi.org/10.1109/TCAD.2015.2427251 0278-0070 1937-4151 https://scholarbank.nus.edu.sg/handle/10635/156184 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements |
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Science & Technology Technology Computer Science, Hardware & Architecture Computer Science, Interdisciplinary Applications Engineering, Electrical & Electronic Computer Science Engineering Emerging nonvolatile memories (eNVMs) hardware security physical unclonable function (PUF) spin-transfer torque magnetic RAM (STT-MRAM) PHASE-CHANGE MEMORY DESIGN SIMULATION DEVICE PUFS |
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Science & Technology Technology Computer Science, Hardware & Architecture Computer Science, Interdisciplinary Applications Engineering, Electrical & Electronic Computer Science Engineering Emerging nonvolatile memories (eNVMs) hardware security physical unclonable function (PUF) spin-transfer torque magnetic RAM (STT-MRAM) PHASE-CHANGE MEMORY DESIGN SIMULATION DEVICE PUFS Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
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10.1109/TCAD.2015.2427251 |
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DEPT OF ELECTRICAL & COMPUTER ENGG |
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DEPT OF ELECTRICAL & COMPUTER ENGG Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik |
format |
Article |
author |
Zhang, Le Fong, Xuanyao Chang, Chip-Hong Kong, Zhi Hui Roy, Kaushik |
author_sort |
Zhang, Le |
title |
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
title_short |
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
title_full |
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
title_fullStr |
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
title_full_unstemmed |
Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator |
title_sort |
optimizating emerging nonvolatile memories for dual-mode applications: data storage and key generator |
publisher |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
publishDate |
2019 |
url |
https://scholarbank.nus.edu.sg/handle/10635/156184 |
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1778169138345148416 |