SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING

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Bibliographic Details
Main Author:	NG SEAN PIN
Other Authors:	DEPT OF ELECTRICAL & COMPUTER ENGG
Format:	Theses and Dissertations
Published:	2019
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/158748
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-158748
record_format	dspace
spelling	sg-nus-scholar.10635-1587482019-09-16T13:10:47Z SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING NG SEAN PIN DEPT OF ELECTRICAL & COMPUTER ENGG CHOI WEE KIONG VIVIAN NG Master's MASTER OF ENGINEERING 2019-09-16T02:37:11Z 2019-09-16T02:37:11Z 2001 Thesis NG SEAN PIN (2001). SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING. ScholarBank@NUS Repository. https://scholarbank.nus.edu.sg/handle/10635/158748 CCK BATCHLOAD 20190911
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Master's
author2	DEPT OF ELECTRICAL & COMPUTER ENGG
author_facet	DEPT OF ELECTRICAL & COMPUTER ENGG NG SEAN PIN
format	Theses and Dissertations
author	NG SEAN PIN
spellingShingle	NG SEAN PIN SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
author_sort	NG SEAN PIN
title	SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
title_short	SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
title_full	SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
title_fullStr	SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
title_full_unstemmed	SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING
title_sort	synthesis of ge nanocrystals in amorphous silicon oxide using rapid thermal annealing
publishDate	2019
url	https://scholarbank.nus.edu.sg/handle/10635/158748
_version_	1681099842895478784

SYNTHESIS OF GE NANOCRYSTALS IN AMORPHOUS SILICON OXIDE USING RAPID THERMAL ANNEALING

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