Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO
IEEE ELECTRON DEVICE LETTERS
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2020
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sg-nus-scholar.10635-1688212024-04-17T03:20:16Z Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO Wang, Lin Liao, Wugang Xu, Shengqiang Gong, Xiao Zhu, Chunxiang Ang, Kah-Wee ELECTRICAL AND COMPUTER ENGINEERING ALD black phosphorus MgO n-Type conduction transistors IEEE ELECTRON DEVICE LETTERS 40 3 471 - 474 2020-06-01T01:38:08Z 2020-06-01T01:38:08Z 2019-03-01 Article Wang, Lin, Liao, Wugang, Xu, Shengqiang, Gong, Xiao, Zhu, Chunxiang, Ang, Kah-Wee (2019-03-01). Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO. IEEE ELECTRON DEVICE LETTERS 40 (3) : 471 - 474. ScholarBank@NUS Repository. 7413106 https://scholarbank.nus.edu.sg/handle/10635/168821 Institute of Electrical and Electronics Engineers Inc. |
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ALD black phosphorus MgO n-Type conduction transistors |
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ALD black phosphorus MgO n-Type conduction transistors Wang, Lin Liao, Wugang Xu, Shengqiang Gong, Xiao Zhu, Chunxiang Ang, Kah-Wee Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
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IEEE ELECTRON DEVICE LETTERS |
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ELECTRICAL AND COMPUTER ENGINEERING |
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ELECTRICAL AND COMPUTER ENGINEERING Wang, Lin Liao, Wugang Xu, Shengqiang Gong, Xiao Zhu, Chunxiang Ang, Kah-Wee |
format |
Article |
author |
Wang, Lin Liao, Wugang Xu, Shengqiang Gong, Xiao Zhu, Chunxiang Ang, Kah-Wee |
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Wang, Lin |
title |
Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
title_short |
Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
title_full |
Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
title_fullStr |
Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
title_full_unstemmed |
Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO |
title_sort |
unipolar n-type conduction in black phosphorus induced by atomic layer deposited mgo |
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Institute of Electrical and Electronics Engineers Inc. |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/168821 |
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1800914021002510336 |