Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

10.1016/j.apsusc.2014.11.180

Saved in:

Bibliographic Details
Main Authors:	Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J
Other Authors:	DEPT OF CHEMISTRY
Format:	Article
Language:	English
Published:	ELSEVIER 2020
Subjects:	Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/170787
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Description
Summary:	10.1016/j.apsusc.2014.11.180