Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

• Main Authors: Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J
• Other Authors: DEPT OF CHEMISTRY
• Format: Article
• Language: English
• Published: ELSEVIER 2020
• Subjects: Science & Technology; Physical Sciences; Technology; Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter; Chemistry; Materials Science; Physics; Wet chemical cleaning; Surface treatment; Intrinsic amorphous silicon; Boron emitter; Passivat ion; Annealing; P-TYPE; RECOMBINATION; INTERFACES
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/170787
• Institution: National University of Singapore

10.1016/j.apsusc.2014.11.180