Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
10.1016/j.apsusc.2014.11.180
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sg-nus-scholar.10635-1707872020-06-30T13:22:51Z Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J DEPT OF CHEMISTRY Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES 10.1016/j.apsusc.2014.11.180 APPLIED SURFACE SCIENCE 328 140-145 2020-06-30T07:32:47Z 2020-06-30T07:32:47Z 2015-02-15 2020-06-30T06:21:47Z Article Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J (2015-02-15). Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation. APPLIED SURFACE SCIENCE 328 : 140-145. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2014.11.180 0169-4332 1873-5584 https://scholarbank.nus.edu.sg/handle/10635/170787 en ELSEVIER Elements |
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Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES |
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Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
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10.1016/j.apsusc.2014.11.180 |
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DEPT OF CHEMISTRY |
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DEPT OF CHEMISTRY Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J |
format |
Article |
author |
Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J |
author_sort |
Meddeb, H |
title |
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
title_short |
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
title_full |
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
title_fullStr |
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
title_full_unstemmed |
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation |
title_sort |
wet chemical treatment of boron doped emitters on n-type (100) c-si prior to amorphous silicon passivation |
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2020 |
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https://scholarbank.nus.edu.sg/handle/10635/170787 |
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1681101319922778112 |