Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

10.1016/j.apsusc.2014.11.180

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Main Authors: Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J
Other Authors: DEPT OF CHEMISTRY
Format: Article
Language:English
Published: ELSEVIER 2020
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/170787
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-1707872020-06-30T13:22:51Z Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation Meddeb, H Bearda, T Payo, M Recaman Abdelwahab, I Abdulraheem, Y Ezzaouia, H Gordon, I Szlufcik, J Poortmans, J DEPT OF CHEMISTRY Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Wet chemical cleaning Surface treatment Intrinsic amorphous silicon Boron emitter Passivat ion Annealing P-TYPE RECOMBINATION INTERFACES 10.1016/j.apsusc.2014.11.180 APPLIED SURFACE SCIENCE 328 140-145 2020-06-30T07:32:47Z 2020-06-30T07:32:47Z 2015-02-15 2020-06-30T06:21:47Z Article Meddeb, H, Bearda, T, Payo, M Recaman, Abdelwahab, I, Abdulraheem, Y, Ezzaouia, H, Gordon, I, Szlufcik, J, Poortmans, J (2015-02-15). Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation. APPLIED SURFACE SCIENCE 328 : 140-145. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2014.11.180 0169-4332 1873-5584 https://scholarbank.nus.edu.sg/handle/10635/170787 en ELSEVIER Elements
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
language English
topic Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Materials Science, Coatings & Films
Physics, Applied
Physics, Condensed Matter
Chemistry
Materials Science
Physics
Wet chemical cleaning
Surface treatment
Intrinsic amorphous silicon
Boron emitter
Passivat ion
Annealing
P-TYPE
RECOMBINATION
INTERFACES
spellingShingle Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Materials Science, Coatings & Films
Physics, Applied
Physics, Condensed Matter
Chemistry
Materials Science
Physics
Wet chemical cleaning
Surface treatment
Intrinsic amorphous silicon
Boron emitter
Passivat ion
Annealing
P-TYPE
RECOMBINATION
INTERFACES
Meddeb, H
Bearda, T
Payo, M Recaman
Abdelwahab, I
Abdulraheem, Y
Ezzaouia, H
Gordon, I
Szlufcik, J
Poortmans, J
Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
description 10.1016/j.apsusc.2014.11.180
author2 DEPT OF CHEMISTRY
author_facet DEPT OF CHEMISTRY
Meddeb, H
Bearda, T
Payo, M Recaman
Abdelwahab, I
Abdulraheem, Y
Ezzaouia, H
Gordon, I
Szlufcik, J
Poortmans, J
format Article
author Meddeb, H
Bearda, T
Payo, M Recaman
Abdelwahab, I
Abdulraheem, Y
Ezzaouia, H
Gordon, I
Szlufcik, J
Poortmans, J
author_sort Meddeb, H
title Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
title_short Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
title_full Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
title_fullStr Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
title_full_unstemmed Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
title_sort wet chemical treatment of boron doped emitters on n-type (100) c-si prior to amorphous silicon passivation
publisher ELSEVIER
publishDate 2020
url https://scholarbank.nus.edu.sg/handle/10635/170787
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